Характеристики
STGD18N40LZT4, IGBT транзистор, 400V, 25A, [D-PAK]The STGD18N40LZT4 is an internally clamped IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diode between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low ON-state voltage drop and low threshold drive for use in automotive ignition system. It is suitable for pencil coil electronic ignition drive.
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
• 180mJ Avalanche energy @ TC = 150 C, L = 3mH