SST25VF010A-33-4C-SAE, Микросхема

Характеристики

SST25VF010A-33-4C-SAE, МикросхемаThe SST25VF010A-33-4C-SAE is a SPI Serial Flash Memory with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF010A device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF010A device operates with a single 2.7 to 3.6V power supply.

• Serial interface architecture — SPI compatible of mode 0 and mode 3
• Low power consumption — Active read current of 7mA (typical), standby current of 8µA (typical)
• Flexible erase capability — Uniform 4kB sectors and uniform 32kB overlay blocks
• Fast erase and byte-program
• Auto Address Increment (AAI) programming
• Superior reliability
• Flexible erase capability
• End-of-write detection — Software status
• Hold pin (HOLD#) — Suspends a serial sequence to the memory without deselecting the device
• Write protection (WP#) — Enables/disables the lock-down function of the status register
• Software write protection — Write protection through Block-Protection bits in status register