d458ccdbde785ae7e96dacb025985e7e

Микросхема SN74LVC1G11DBVR, ЛИ3

24,50 руб.

x 24,50 = 24,50
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Склад №110-12 дней24,50руб.22,79руб.22,05руб.21,56руб.20,09руб.19,60руб.19,11руб.17,64руб.
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Склад №25-7 дней44,35руб.40,67руб.39,94руб.38,96руб.36,26руб.35,53руб.34,55руб.31,12руб.
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Склад №35 дней57,33руб.52,92руб.51,70руб.50,47руб.47,04руб.45,82руб.44,84руб.40,18руб.
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Склад №47-10 дней29,40руб.26,95руб.26,46руб.25,73руб.24,01руб.23,52руб.22,79руб.20,58руб.
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Склад №55 дней56,60руб.52,19руб.50,96руб.49,74руб.48,27руб.46,55руб.44,10руб.39,69руб.

Характеристики

SN74LVC1G11DBVR, ЛИ3The SN74LVC1G11DBVR is a single 3-input Positive-AND Gate performs the Boolean function in positive logic. NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. ESD protection exceeds JESD 22, 2000V human-body model (A114-A), 200V machine model (A115-A) and 1000V charged-device model (C101).

• Supports 5V VCC operation
• Inputs accept voltage to 5.5V
• Maximum TPD of 4.1ns at 3.3V
• Low power consumption, 10µA maximum ICC
• ±24mA Output drive at 3.3V
• Ioff supports partial power-down mode operation
• Latch-up performance exceeds 100mA per JESD 78, class II
• Green product and no Sb/Br