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SKIIP32NAB12T7 Силовой модуль.

10.800,00 руб.

Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 1200 ± 20 65 / 45 130 / 90 60 / 40 120 / 80 V V A A A A Bridge Rectifier VRRM ID IFSM I 2t Theatsink = 80 °C tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; si

x 10.800,00 = 10.800,00
Артикул: 1177257 Категория:
НаличиеСрок1шт10шт50шт100шт1000шт3000шт
Склад №110-12 дней10.800,00руб.10.044,00руб.9.504,00руб.9.180,00руб.8.856,00руб.8.694,00руб.
НаличиеСрок1шт10шт50шт100шт1000шт3000шт
Склад №27-10 дней12.204,00руб.11.016,00руб.10.800,00руб.10.368,00руб.10.044,00руб.9.828,00руб.
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Склад №37-10 дней13.176,00руб.11.880,00руб.11.556,00руб.11.232,00руб.10.584,00руб.9.936,00руб.
НаличиеСрок1шт10шт50шт100шт1000шт3000шт
Склад №47-10 дней12.852,00руб.11.556,00руб.11.340,00руб.10.908,00руб.10.476,00руб.9.882,00руб.
НаличиеСрок1шт10шт50шт100шт1000шт3000шт
Склад №55 дней18.360,00руб.16.524,00руб.16.200,00руб.15.552,00руб.15.012,00руб.13.716,00руб.
НаличиеСрок1шт10шт50шт100шт1000шт3000шт
Склад №66 дней18.252,00руб.16.416,00руб.16.070,40руб.15.444,00руб.14.904,00руб.13.608,00руб.

Характеристики

Absolute Maximum Ratings Symbol Conditions 1) Values Units Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C 1200 ± 20 65 / 45 130 / 90 60 / 40 120 / 80 V V A A A A Bridge Rectifier VRRM ID IFSM I 2t Theatsink = 80 °C tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C 1500 35 700 2400 V A A A2s Tj Tstg Visol AC, 1 min. – 40 . . . + 150 – 40 . . . + 125 2500 °C °C V Characteristics Symbol Conditions 1) min. typ. max. Units IGBT — Inverter VCEsat td(on) tr td(off) tf Eon + Eoff Cies Rthjh IC = 50 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V IC = 50 A; Tj = 125 °C Rgon = Rgoff = 22 Ω inductive load VCE = 25 V; VGE = 0 V, 1 MHz per IGBT – – – – – – – – 2,5(3,1) 44 56 380 70 13 3,3 – 3,0(3,7) 100 100 500 100 – – 0,5 V ns ns ns ns mJ nF K/W IGBT — Chopper VCEsat td(on) tr td(off) tf Eon + Eoff Cies Rthjh IC = 25 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V IC = 25 A; Tj = 125 °C Rgon = Rgoff = 47 Ω inductive load VCE = 25 V; VGE = 0 V, 1 MHz per IGBT – – – – – – – – 2,5(3,1) 75 65 400 50 6,2 1,65 – 3,0(3,7) 150 130 600 100 – – 1,0 V ns ns ns ns mJ nF K/W Diode 2) — Inverter & Chopper VF = VEC VTO rT IRRM Qrr Eoff Rthjh IF = 50 A Tj = 25 (125) °C Tj = 125 °C Tj = 125 °C IF = 50 A, VR = – 600 V diF/dt = – 800 A/µs VGE = 0 V, Tj = 125 °C per diode – – – – – – – 2,0(1,8) 1,0 16 40 8,0 2,0 – 2,5(2,3) 1,2 22 – – – 1,0 V V mΩ A µC mJ K/W Diode — Rectifier VF Rthjh IF = 35 A, Tj = 25 °C per diode – – 1,2 – – 1,6 V K/W Temperature Sensor RTS T = 25 / 100 °C 1000 / 1670 Ω Mechanical Data M1 Case case to heatsink, SI Units mechanical outline see page B 16 – 9 2 – M3 2,5 Nm SKiiP 32 NAB 12 MiniSKIIP 3 SEMIKRON integrated intelligent Power SKiiP 32 NAB 12 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M3 UL recognized file no. E63532 • specification of temperature sensor see part A • common characteristics B 16 – 4 Options • also available with powerful chopper. For characteristics please refer to Inverter IGBT 1) Theatsink = 25 °C, unless otherwise specified 2) CAL = Controlled Axial Lifetime Technology (soft and fast recovery) * For diagrams of the Chopper IGBT please refer to SKiiP 30 NAB 12