Характеристики
IRLR2905ZPBF, Транзистор, N-канал 55В 60А, [D-PAK]The IRLR2905ZPBF is a 55V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
• Logic level
• Advanced process technology
• Ultra low on-resistance
• Repetitive avalanche allowed up to Tjmax
• 175 C Operating temperature