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Транзистор IRLIB9343PBF

96,00 руб.

x 96,00 = 96,00
Артикул: 1128199 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №110-12 дней96,00руб.89,28руб.86,40руб.84,48руб.78,72руб.76,80руб.74,88руб.69,12руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №25-7 дней173,76руб.159,36руб.156,48руб.152,64руб.142,08руб.139,20руб.135,36руб.121,92руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №35 дней224,64руб.207,36руб.202,56руб.197,76руб.184,32руб.179,52руб.175,68руб.157,44руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №47-10 дней115,20руб.105,60руб.103,68руб.100,80руб.94,08руб.92,16руб.89,28руб.80,64руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №55 дней221,76руб.204,48руб.199,68руб.194,88руб.189,12руб.182,40руб.172,80руб.155,52руб.

Характеристики

IRLIB9343PBFThe IRLIB9343PBF is a -55V single P-channel Digital Audio HEXFET® Power MOSFET specifically designed for class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET is 175 C operating junction temperature and repetitive avalanche capability. It features combine to make this MOSFET a highly efficient, robust and reliable device for class-D audio amplifier applications.

• Advanced process technology
• Key parameters optimized for class-D audio amplifier applications
• Low RDS (ON) for improved efficiency
• Low QG and QSW for better THD and improved efficiency
• Low QRR for better THD and lower EMI
• Repetitive avalanche capability for robustness and reliability
• 175 C Operating junction temperature for ruggedness

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-220AB Full-Pak, инфо: Полевой транзистор, P-канальный, 55 В, 19 А, 39 Вт