Характеристики
IRLD120PBFThe IRLD120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
• Dynamic dV/dt rating
• For automatic insertion
• Repetitive avalanche rated
• End stackable
• Logic-level gate drive
• RDS (ON) Specified at VGS = 4 and 5V
• -55 to 175 C Operating temperature range
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: 4-DIP, Hexdip, HVMDIP, инфо: Полевой транзистор, N-канальный, 100 В, 1.3 А