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IRGS4615DPBF, Транзистор, IGBT с диодом, N-канал, 600В

89,00 руб.

x 89,00 = 89,00
Артикул: 1128367 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №110-12 дней89,00руб.82,77руб.80,10руб.78,32руб.72,98руб.71,20руб.69,42руб.64,08руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №25-7 дней161,09руб.147,74руб.145,07руб.141,51руб.131,72руб.129,05руб.125,49руб.113,03руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №35 дней208,26руб.192,24руб.187,79руб.183,34руб.170,88руб.166,43руб.162,87руб.145,96руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №47-10 дней106,80руб.97,90руб.96,12руб.93,45руб.87,22руб.85,44руб.82,77руб.74,76руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №55 дней205,59руб.189,57руб.185,12руб.180,67руб.175,33руб.169,10руб.160,20руб.144,18руб.

Характеристики

IRGS4615DPBF, Транзистор, IGBT с диодом, N-канал, 600В Single IGBT up to 20A, International Rectifier
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs

IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Дополнительная информация

Корпус

d2pak
Структура

n-канал+диод