IRG4IBC30KDPBF, Транзистор

228,00 руб.

x 228,00 = 228,00
Артикул: 1128431 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №110-12 дней228,00руб.212,04руб.205,20руб.200,64руб.193,80руб.182,40руб.177,84руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №25-7 дней428,64руб.394,44руб.387,60руб.378,48руб.364,80руб.344,28руб.335,16руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №35-7 дней435,48руб.401,28руб.392,16руб.383,04руб.364,80руб.346,56руб.339,72руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №410 дней273,60руб.250,80руб.246,24руб.239,40руб.232,56руб.218,88руб.212,04руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №57 дней396,72руб.364,80руб.355,68руб.348,84руб.337,44руб.316,92руб.307,80руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №610-12 дней248,52руб.230,28руб.223,44руб.218,88руб.212,04руб.198,36руб.193,80руб.

Характеристики

IRG4IBC30KDPBF, Транзистор Co-Pack IGBT up to 20A, International Rectifier
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Дополнительная информация

Корпус

to-220 fullpak