Характеристики
IRFU9120PBFThe IRFU9120PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
• Dynamic dV/dt rating
• Straight lead
• Repetitive avalanche rated
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-251AA, инфо: Полевой транзистор, P-канальный, 100 В, 5.6 А, 42 Вт, 0.60 Ом