Характеристики
IRFU310PBFThe IRFU310PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
• Dynamic dV/dt rating
• Ease of paralleling
• Straight lead
• Repetitive avalanche rated
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-251AA, инфо: Полевой транзистор, N-канальный, 400 В, 1.7 А