Характеристики
IRFP340PBFThe IRFP340PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.
• Dynamic dV/dt rating
• Ease of paralleling
• Repetitive avalanche rated
• Isolated central mounting hole
• Simple drive requirements
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-247-3, инфо: Полевой транзистор, N-канальный, 400В 11А