Характеристики
IRFP31N50LPBFThe IRFP31N50LPBF is a N-channel enhancement-mode Power MOSFET with lower gate charge.
• Superfast body diode eliminates the need for external diodes
• Simple drive requirements
• Enhanced dV/dt capabilities offer improved ruggedness
• Higher gate voltage threshold offers improved noise immunity
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-247-3, инфо: Полевой транзистор, N-канальный, 500В 31А 460Вт