IRFI4212H-117P, МОП-транзистор, N Канал, 11 А, 100 В

Характеристики

IRFI4212H-117P, МОП-транзистор, N Канал, 11 А, 100 В The IRFI4212H-117P is a HEXFET® dual N-channel Power MOSFET designed for class-D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device. It can delivery up to 150W per channel into 4R load in half-bridge configuration amplifier.

• Reduces the part count by half
• Facilitates better PCB layout
• Low RDS (ON) for improved efficiency
• Low Qg and Qsw for better THD and improved efficiency
• Low Qrr for better THD and lower EMI

Полупроводники — ДискретныеТранзисторыМОП-транзисторы