IRFD020PBF, МОП-транзистор, N Канал, 2.4 А, 50 В, 100 мОм

Характеристики

IRFD020PBF, МОП-транзистор, N Канал, 2.4 А, 50 В, 100 мОм The IRFD020PBF is a N-channel enhancement-mode Power MOSFET housed in a HVMDIP technology package. The efficient geometry and unique processing of the HVMDIP design achieves very low ON-state resistance combined with high trans-conductance and extreme device ruggedness. This package is used in high volume applications where automatic PC board insertion is desirable, such as circuit boards for computers, printers, telecommunications equipment and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging.

• For automatic insertion
• Compact, end stackable
• Ease of paralleling
• Excellent temperature stability
• Fast switching

Полупроводники — ДискретныеТранзисторыМОП-транзисторы