Характеристики
IRFB23N20DPBFThe IRFB23N20DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
• Fully characterized capacitance including effective COSS to simplify design
• Fully characterized avalanche voltage and current
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-220AB, инфо: Полевой транзистор, N-канальный, 200 В, 24 А