Характеристики
IRF9620PBFThe IRF9620PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
• Dynamic dV/dt rating
• Ease of paralleling
• Simple drive requirements
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-220AB, инфо: Полевой транзистор, P-канальный, 200 В, 3.5 А, 40 Вт, 1.5 Ом