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IRF7811AVPBF, Транзистор, N-канал 30В 14А [SO-8]

33,00 руб.

x 33,00 = 33,00
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Склад №110-12 дней33,00руб.30,69руб.29,70руб.29,04руб.27,06руб.26,40руб.25,74руб.23,76руб.
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Склад №25-7 дней59,73руб.54,78руб.53,79руб.52,47руб.48,84руб.47,85руб.46,53руб.41,91руб.
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Склад №35 дней77,22руб.71,28руб.69,63руб.67,98руб.63,36руб.61,71руб.60,39руб.54,12руб.
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Склад №47-10 дней39,60руб.36,30руб.35,64руб.34,65руб.32,34руб.31,68руб.30,69руб.27,72руб.
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Склад №55 дней76,23руб.70,29руб.68,64руб.66,99руб.65,01руб.62,70руб.59,40руб.53,46руб.

Характеристики

IRF7811AVPBF, Транзистор, N-канал 30В 14А [SO-8]The IRF7811AVPBF is a HEXFET® single N-channel Power MOSFET designed for vapour phase, infrared, convection or wave soldering techniques. This new device employs advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-to-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS (ON), gate charge and CdV/dt-induced turn-ON immunity. It offers an extremely low combination of Qsw and RDS (ON) for reduced losses in both control and synchronous FET applications. Power dissipation of greater than 2W is possible in a typical PCB mount application.

• Low conduction losses
• Low switching losses
• 100% Rg tested
• Fast switching

Дополнительная информация

Корпус

so8

Структура

n-канал