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Транзистор IRF7413TRPBF, Nкан 30В 13А SO8

61,00 руб.

x 61,00 = 61,00
Артикул: 1128047 Категории: ,
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Склад №110-12 дней61,00руб.56,73руб.54,90руб.53,68руб.50,02руб.48,80руб.47,58руб.43,92руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №25-7 дней110,41руб.101,26руб.99,43руб.96,99руб.90,28руб.88,45руб.86,01руб.77,47руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №35 дней142,74руб.131,76руб.128,71руб.125,66руб.117,12руб.114,07руб.111,63руб.100,04руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №47-10 дней73,20руб.67,10руб.65,88руб.64,05руб.59,78руб.58,56руб.56,73руб.51,24руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №55 дней140,91руб.129,93руб.126,88руб.123,83руб.120,17руб.115,90руб.109,80руб.98,82руб.

Характеристики

IRF7413TRPBF, Nкан 30В 13А SO8The IRF7413TRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the ruggedized device design, provides an extremely efficient and reliable operation for use in battery and load management application. The IRF7413PBF is a fifth generation single N-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

• Generation V technology
• Ultra-low ON-resistance
• Dynamic dV/dt rating
• Fast switching
• 100% Rg tested
• Low switching losses
• Low conduction losses

Транзисторы полевые импортные

Дополнительная информация

Корпус

so8
Структура

n-канал