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IRF7413PBF, Транзистор, N-канал 30В 13А, (=IRF7413TRPBF), [SO-8]

28,00 руб.

x 28,00 = 28,00
Артикул: 1125991 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №110-12 дней28,00руб.26,04руб.25,20руб.24,64руб.22,96руб.22,40руб.21,84руб.20,16руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №25-7 дней50,68руб.46,48руб.45,64руб.44,52руб.41,44руб.40,60руб.39,48руб.35,56руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №35 дней65,52руб.60,48руб.59,08руб.57,68руб.53,76руб.52,36руб.51,24руб.45,92руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №47-10 дней33,60руб.30,80руб.30,24руб.29,40руб.27,44руб.26,88руб.26,04руб.23,52руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №55 дней64,68руб.59,64руб.58,24руб.56,84руб.55,16руб.53,20руб.50,40руб.45,36руб.

Характеристики

IRF7413PBF, Транзистор, N-канал 30В 13А, (=IRF7413TRPBF), [SO-8]The IRF7413PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in typical PCB mount applications.

• Generation V technology
• Ultra-low ON-resistance
• Dynamic dV/dt rating
• Fast switching
• 100% Rg tested
• Low switching losses
• Low conduction losses

Дополнительная информация

Корпус

so8
Структура

n-канал