Транзистор IRF7301TRPBF

Характеристики

IRF7301TRPBFThe IRF7301TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Dynamic dV/dt rating
• Fast switching performance

Транзисторы / Полевые транзисторы / Сборки MOSFET транзисторов
Корпус: 8-SO, инфо: Сборка из полевых транзисторов, 2N-канальный, 20 В, 5.2 А