Характеристики
IRF3710PBF, Транзистор, N-канал 100В 57А [TO-220AB]The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced process technology
• Ultra low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• 175 C Operating temperature