Характеристики
IRF3315PBF, Транзистор, N-канал 150В 27А [TO-220AB]The IRF3315PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
• Advanced process technology
• Dynamic dV/dt rating
• Fully avalanche rating