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Микросхема IR2181PBF, 600V 8-pin DIP

281,26 руб.

x 281,26 = 281,26
Артикул: 1112652 Категории: ,
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Склад №110-12 дней281,26руб.261,57руб.253,13руб.247,51руб.239,07руб.225,01руб.219,38руб.
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Склад №25-7 дней528,77руб.486,58руб.478,14руб.466,89руб.450,02руб.424,70руб.413,45руб.
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Склад №35-7 дней537,21руб.495,02руб.483,77руб.472,52руб.450,02руб.427,52руб.419,08руб.
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Склад №410 дней337,51руб.309,39руб.303,76руб.295,32руб.286,89руб.270,01руб.261,57руб.
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Склад №57 дней489,39руб.450,02руб.438,77руб.430,33руб.416,26руб.390,95руб.379,70руб.
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Склад №610-12 дней306,57руб.284,07руб.275,63руб.270,01руб.261,57руб.244,70руб.239,07руб.

Характеристики

IR2181PBF, 600V 8-pin DIPThe IR2181PBF is a high voltage high speed power MOSFET and IGBT Driver with an independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

• Floating channel designed for bootstrap operation
• Tolerant to negative transient voltage (dV/dt immune)
• Under-voltage lockout for both channels
• Matched propagation delay for both channels
• Logic and power ground ±5V offset
• Lower di/dt gate driver for better noise immunity
• Output source/sink current capability 1.4/1.8A