92f9ec3941349ffb7bd57d3821412b85

IPU80R1K2P7AKMA1, МОП-транзистор, N Канал, 4.5 А, 800 В

94,00 руб.

x 94,00 = 94,00
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Склад №110-12 дней94,00руб.87,42руб.84,60руб.82,72руб.77,08руб.75,20руб.73,32руб.67,68руб.
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Склад №25-7 дней170,14руб.156,04руб.153,22руб.149,46руб.139,12руб.136,30руб.132,54руб.119,38руб.
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Склад №35 дней219,96руб.203,04руб.198,34руб.193,64руб.180,48руб.175,78руб.172,02руб.154,16руб.
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Склад №47-10 дней112,80руб.103,40руб.101,52руб.98,70руб.92,12руб.90,24руб.87,42руб.78,96руб.
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Склад №55 дней217,14руб.200,22руб.195,52руб.190,82руб.185,18руб.178,60руб.169,20руб.152,28руб.

Характеристики

IPU80R1K2P7AKMA1, МОП-транзистор, N Канал, 4.5 А, 800 В The 800V CoolMOS™ P7 N-channel power MOSFETs from Infineon are highly efficient MOSFETs with best-in-class RDS(on)/package. These MOSFETs set a new benchmark in efficiency and thermal performance. The 800V CoolMOS™ P7 product families have been developed for flyback based low power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. Designed to address typical challenges in the various applications by delivering best-in-class price/performance ratio with excellent ease of use, making them a perfect fit for target applications. These product family offers 0.1% to 0.6% efficiency gain and 2 C to 8 C lower MOSFET temperature as compared to 800V CoolMOS™ C3 tested in flyback based applications. Such best in class performance comes from a combination of various optimized device parameters such as more than 50% reduction in switching losses (Eoss) and gate charge (Qg) and reduced input capacitance (Ciss) and output capacitance (C

• Best in class FOM (Figure Of Merit) RDS(on) * Eoss (switching losses)
• Best in class DPAK RDS(on) of 280mohm
• Enabling higher power density designs, BOM savings and lower assembly costs
• Best in class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
• Easy to drive and to design-in
• Class 1C (HBM), class 2 (HBM), class C3 (CDM) integrated zener diode ESD protection
• Better production yield by reducing ESD related failures
• Best in class quality and reliability
• Fully optimized portfolio, easy to select right parts for fine tuning of designs
• Ease of use is an intrinsic feature designed into this product family

Полупроводники — ДискретныеТранзисторыМОП-транзисторы

Дополнительная информация

Максимальная Рабочая Температура

150 C

Количество Выводов

3вывод(-ов)

Стандарт Корпуса Транзистора

TO-251

Рассеиваемая Мощность

37Вт

Полярность Транзистора

N Канал

Напряжение Истока-стока Vds

800В

Непрерывный Ток Стока

4.5А