52н

Транзистор IKW40N120H3

814,00 руб.

x 814,00 = 814,00
Артикул: 1128414 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №110-12 дней814,00руб.757,02руб.732,60руб.716,32руб.691,90руб.651,20руб.634,92руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №25-7 дней1.530,32руб.1.408,22руб.1.383,80руб.1.351,24руб.1.302,40руб.1.229,14руб.1.196,58руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №35-7 дней1.554,74руб.1.432,64руб.1.400,08руб.1.367,52руб.1.302,40руб.1.237,28руб.1.212,86руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №410 дней976,80руб.895,40руб.879,12руб.854,70руб.830,28руб.781,44руб.757,02руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №57 дней1.416,36руб.1.302,40руб.1.269,84руб.1.245,42руб.1.204,72руб.1.131,46руб.1.098,90руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №610-12 дней887,26руб.822,14руб.797,72руб.781,44руб.757,02руб.708,18руб.691,90руб.

Характеристики

IKW40N120H3The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

• Low switching losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
• Short circuit capability
• Excellent performance
• Low switching and conduction losses