Заполнитель

IKW15N120H3, Транзистор IGBT, N-канальный, 1200 В, 30 А

190,00 руб.

x 190,00 = 190,00
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Склад №110-12 дней190,00руб.176,70руб.171,00руб.167,20руб.161,50руб.152,00руб.148,20руб.
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Склад №25-7 дней357,20руб.328,70руб.323,00руб.315,40руб.304,00руб.286,90руб.279,30руб.
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Склад №35-7 дней362,90руб.334,40руб.326,80руб.319,20руб.304,00руб.288,80руб.283,10руб.
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Склад №410 дней228,00руб.209,00руб.205,20руб.199,50руб.193,80руб.182,40руб.176,70руб.
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Склад №57 дней330,60руб.304,00руб.296,40руб.290,70руб.281,20руб.264,10руб.256,50руб.
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Склад №610-12 дней207,10руб.191,90руб.186,20руб.182,40руб.176,70руб.165,30руб.161,50руб.

Характеристики

IKW15N120H3, Транзистор IGBT, N-канальный, 1200 В, 30 А The IKW15N120H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

• Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
• Low switching losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
• Short-circuit capability
• Excellent performance
• Low switching and conduction losses
• Very good EMI behaviour
• Small gate resistor for reduced delay time and voltage overshoot
• Best-in-class IGBT efficiency and EMI behaviour
• Packaged with and without freewheeling diode for increased design freedom
• Green product
• Halogen-free