e5793bee77dae9f083442ee704dcad50

Транзистор HGTG27N120BN, 72A/1200V N-

557,00 руб.

x 557,00 = 557,00
Артикул: 1128408 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №110-12 дней557,00руб.518,01руб.501,30руб.490,16руб.473,45руб.445,60руб.434,46руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №25-7 дней1.047,16руб.963,61руб.946,90руб.924,62руб.891,20руб.841,07руб.818,79руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №35-7 дней1.063,87руб.980,32руб.958,04руб.935,76руб.891,20руб.846,64руб.829,93руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №410 дней668,40руб.612,70руб.601,56руб.584,85руб.568,14руб.534,72руб.518,01руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №57 дней969,18руб.891,20руб.868,92руб.852,21руб.824,36руб.774,23руб.751,95руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №610-12 дней607,13руб.562,57руб.545,86руб.534,72руб.518,01руб.484,59руб.473,45руб.

Характеристики

HGTG27N120BN, 72A/1200V N-The HGTG27N120BN is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.

• 140ns at TJ = 150 C Fall time

Дополнительная информация

Корпус

to-247
Структура

n-канал