e7f0f394adf6b4cc433890248724e754

Транзистор FQPF16N15

198,00 руб.

x 198,00 = 198,00
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Склад №110-12 дней198,00руб.184,14руб.178,20руб.174,24руб.168,30руб.158,40руб.154,44руб.
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Склад №25-7 дней372,24руб.342,54руб.336,60руб.328,68руб.316,80руб.298,98руб.291,06руб.
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Склад №35-7 дней378,18руб.348,48руб.340,56руб.332,64руб.316,80руб.300,96руб.295,02руб.
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Склад №410 дней237,60руб.217,80руб.213,84руб.207,90руб.201,96руб.190,08руб.184,14руб.
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Склад №57 дней344,52руб.316,80руб.308,88руб.302,94руб.293,04руб.275,22руб.267,30руб.
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Склад №610-12 дней215,82руб.199,98руб.194,04руб.190,08руб.184,14руб.172,26руб.168,30руб.

Характеристики

FQPF16N15 QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (