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Транзистор FDT458P

34,00 руб.

x 34,00 = 34,00
Артикул: 1127968 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №110-12 дней34,00руб.31,62руб.30,60руб.29,92руб.27,88руб.27,20руб.26,52руб.24,48руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №25-7 дней61,54руб.56,44руб.55,42руб.54,06руб.50,32руб.49,30руб.47,94руб.43,18руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №35 дней79,56руб.73,44руб.71,74руб.70,04руб.65,28руб.63,58руб.62,22руб.55,76руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №47-10 дней40,80руб.37,40руб.36,72руб.35,70руб.33,32руб.32,64руб.31,62руб.28,56руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №55 дней78,54руб.72,42руб.70,72руб.69,02руб.66,98руб.64,60руб.61,20руб.55,08руб.

Характеристики

FDT458PThe FDT458P is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild’s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating — MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.

• 100% Avalanche tested
• Enables highly efficiency in synchronous rectification

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: SOT-223-4, инфо: Полевой транзистор, P-канальный, 30 В, 3.4 А, 0.13 Ом