Характеристики
FDN359ANThe FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• Very fast switching
• Low gate charge
Транзисторы полевые импортные