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Транзистор FDN302P

24,00 руб.

x 24,00 = 24,00
Артикул: 1127926 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №110-12 дней24,00руб.22,32руб.21,60руб.21,12руб.19,68руб.19,20руб.18,72руб.17,28руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №25-7 дней43,44руб.39,84руб.39,12руб.38,16руб.35,52руб.34,80руб.33,84руб.30,48руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №35 дней56,16руб.51,84руб.50,64руб.49,44руб.46,08руб.44,88руб.43,92руб.39,36руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №47-10 дней28,80руб.26,40руб.25,92руб.25,20руб.23,52руб.23,04руб.22,32руб.20,16руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №55 дней55,44руб.51,12руб.49,92руб.48,72руб.47,28руб.45,60руб.43,20руб.38,88руб.

Характеристики

FDN302PThe FDN302P is a -20V P-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild’s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating — MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.

• High performance trench technology for extremely low RDS (on)

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: 3-SSOT, инфо: Полевой транзистор, P-канальный, 20 В, 2.4 А, 0.08 Ом, 0.5 Вт