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Транзистор FDC5614P

66,00 руб.

x 66,00 = 66,00
Артикул: 1127914 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №110-12 дней66,00руб.61,38руб.59,40руб.58,08руб.54,12руб.52,80руб.51,48руб.47,52руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №25-7 дней119,46руб.109,56руб.107,58руб.104,94руб.97,68руб.95,70руб.93,06руб.83,82руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №35 дней154,44руб.142,56руб.139,26руб.135,96руб.126,72руб.123,42руб.120,78руб.108,24руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №47-10 дней79,20руб.72,60руб.71,28руб.69,30руб.64,68руб.63,36руб.61,38руб.55,44руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №55 дней152,46руб.140,58руб.137,28руб.133,98руб.130,02руб.125,40руб.118,80руб.106,92руб.

Характеристики

FDC5614PThe FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild’s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or it can minimize the undesirable voltage spikes. This product is general usage and suitable for many different applications.

• Low gate charge
• High performance trench technology for extremely low RDS (on)

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: 6-SSOT, инфо: Полевой транзистор, P-канальный, 60 В, 3 А