Характеристики
FDA59N25The FDA59N25 is an UniFET™ N-channel MOSFET produced using Fairchild Semiconductor’s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
• 63nC Typical low gate charge
• 70pF Typical low Crss
• 100% Avalanche tested
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-3PN, инфо: Полевой транзистор, N-канальный, 250 В, 59 А, 390 Вт