Микросхема 24LC256T-I/SN, Последовательная энергонезависимая память [SO-8]

Характеристики

24LC256T-I/SN, Последовательная энергонезависимая память [SO-8]The 24LC256T-I/SN is a 256kb (32k x 8) I²C™ CMOS serial Electrically Erasable PROM (EEPROM) capable of operation across a broad voltage range (1.7 to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also has a page write capability of up to 64-byte of data. This device is capable of both random and sequential reads up to the 256k boundary. Functional address lines allow up to eight devices on the same bus, for up to 2Mb address space.

• Self-timed erase/write cycle
• 5ms Maximum page write time
• Hardware write-protect pin
• Factory programming available
• 400µA Maximum read current
• 1µA Maximum standby current
• Cascadable up to eight devices
• Schmitt trigger inputs for noise suppression
• Output slope control to eliminate ground bounce
• >4000V ESD protection
• 2-wire serial interface, I²C™ compatible
• More than one million erase/write cycles
• >200-year Data retention