Микросхема 24LC04B/SN, Последовательная энергонезависимая память [SO-8]

Характеристики

24LC04B/SN, Последовательная энергонезависимая память [SO-8]The 24LC04B/SN is a 2kB I²C™ serial Electrically Erasable Programmable Read-Only Memory (EEPROM) organized as two blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of only 1µA and 1mA, respectively. The 24XX04 also has a page write capability for up to 16 bytes of data.

• Single supply with operation down to 2.5V
• Low-power CMOS technology
• 2-wire serial interface (I²C™ compatible)
• Schmitt trigger inputs for noise suppression
• Output slope control to eliminate ground bounce
• 100 and 400kHz Clock compatibility
• Page write time 3ms, typical
• Self-timed erase/write cycle
• 16-byte Page write buffer
• Hardware write-protect
• ESD protection >4000V
• More than 1million erase/write cycles
• Data retention >200 years