Силовой МОП-транзистор SiHG47N60E-GE3, N-Channel MOSFET, 47 A, 600 V E Series, 3-Pin TO-247AC

Характеристики

EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
Maximum Positive Gate Source Voltage (V) 20
Maximum Diode Forward Voltage (V) 1.2
PCB changed 3
Lead Shape Through Hole
Package Width 5.31(Max)
Package Height 20.82(Max)
Package Length 15.87(Max)
Mounting Through Hole
Tab Tab
Product Category Power MOSFET
Configuration Single
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3.5
Operating Junction Temperature (°C) -55 to 150
Maximum Continuous Drain Current (A) 47
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 64@10V
Typical Gate Charge @ Vgs (nC) 148@10V
Typical Gate Charge @ 10V (nC) 148
Typical Input Capacitance @ Vds (pF) 4810@100V
Maximum Power Dissipation (mW) 357000
Typical Fall Time (ns) 82
Typical Rise Time (ns) 72
Typical Turn-Off Delay Time (ns) 93
Typical Turn-On Delay Time (ns) 28
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Automotive No
Pin Count 3
Supplier Package TO-247AC
Standard Package Name TO-247
Military No
Вес, г 6.53