NDB6060L, МОП-транзистор, N Канал, 48 А, 60 В, 0.02 Ом, 10 В, 2 В

Характеристики

NDB6060L, МОП-транзистор, N Канал, 48 А, 60 В, 0.02 Ом, 10 В, 2 ВThe NDB6060L is a logic level N-channel enhancement-mode power FET produced using Fairchild’s proprietary high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• Low drive requirements allowing operation directly from logic drivers
• Critical DC electrical parameters specified at elevated temperature
• High density cell design for extremely low RDS (ON)

Полупроводники — ДискретныеТранзисторыМОП-транзисторы