IPW65R041CFDFKSA1, МОП-транзистор, N Канал, 68.5 А, 700 В

Характеристики

IPW65R041CFDFKSA1, МОП-транзистор, N Канал, 68.5 А, 700 В The IPW65R041CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

• Limited voltage overshoot during hard commutation
• Easy to design in
• Low switching losses due to low Qrr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Qoss
• Reduced turn on and turn off delay times

Полупроводники — ДискретныеТранзисторыМОП-транзисторы