Характеристики
NGTG50N60FWG, Транзистор IGBT 600V 100A 223W [TO-247]The NGTG50N60FWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and Trench construction, provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
• Optimized for very low collector-to-emitter saturation voltage
• Low switching loss
• Reduces system power dissipation
• 5µs Short-circuit capability