Характеристики
IRGB4620DPBFThe IRGB4620DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features high efficiency in a wide range of applications and switching frequencies, improved reliability due to rugged hard switching performance and higher power capability.
• Low VCE (ON) and switch losses
• Square RBSOA
• Positive VCE (ON) temperature coefficient
• Excellent current sharing in parallel operation
• Enables short-circuit protection scheme
• Environmentally-friendly
• 5µs Short-circuit SOA
Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы
Корпус: TO-220AC, инфо: Биполярный транзистор IGBT, 600 В, 32 А, 140 Вт