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IRG8P08N120KDPBF, Транзистор, IGBT, 1200В 8А [TO-247]

373,00 руб.

x 373,00 = 373,00
Артикул: 1128464 Категории: ,
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
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НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №25-7 дней701,24руб.645,29руб.634,10руб.619,18руб.596,80руб.563,23руб.548,31руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №35-7 дней712,43руб.656,48руб.641,56руб.626,64руб.596,80руб.566,96руб.555,77руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №410 дней447,60руб.410,30руб.402,84руб.391,65руб.380,46руб.358,08руб.346,89руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №57 дней649,02руб.596,80руб.581,88руб.570,69руб.552,04руб.518,47руб.503,55руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт
Склад №610-12 дней406,57руб.376,73руб.365,54руб.358,08руб.346,89руб.324,51руб.317,05руб.

Характеристики

IRG8P08N120KDPBF, Транзистор, IGBT, 1200В 8А [TO-247] Single IGBT up to 20A, International Rectifier
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs

IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Дополнительная информация

Корпус

to-247ac
Структура

n-канал+диод