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IRF7401PBF, Транзистор, N-канал 20В 8.7А [SO-8]

26,00 руб.

x 26,00 = 26,00
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №110-12 дней26,00руб.24,18руб.23,40руб.22,88руб.21,32руб.20,80руб.20,28руб.18,72руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №25-7 дней47,06руб.43,16руб.42,38руб.41,34руб.38,48руб.37,70руб.36,66руб.33,02руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №35 дней60,84руб.56,16руб.54,86руб.53,56руб.49,92руб.48,62руб.47,58руб.42,64руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №47-10 дней31,20руб.28,60руб.28,08руб.27,30руб.25,48руб.24,96руб.24,18руб.21,84руб.
НаличиеСрок1шт20шт50шт100шт1000шт5000шт10000шт50000шт
Склад №55 дней60,06руб.55,38руб.54,08руб.52,78руб.51,22руб.49,40руб.46,80руб.42,12руб.

Характеристики

IRF7401PBF, Транзистор, N-канал 20В 8.7А [SO-8]The IRF7401PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

• Generation V technology
• Dynamic dV/dt rating
• Fast switching
• Low static drain-to-source ON-resistance
• Fully avalanche rating

Дополнительная информация

Корпус

so8

Структура

n-канал