03562b404407da6456fb354e28833295

Микросхема AT28C256-15PU, Энергонезависимая память [PDIP-28]

578,21 руб.

x 578,21 = 578,21
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Склад №110-12 дней578,21руб.537,74руб.520,39руб.508,82руб.491,48руб.462,57руб.451,00руб.
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Склад №25-7 дней1.087,03руб.1.000,30руб.982,96руб.959,83руб.925,14руб.873,10руб.849,97руб.
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Склад №35-7 дней1.104,38руб.1.017,65руб.994,52руб.971,39руб.925,14руб.878,88руб.861,53руб.
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Склад №410 дней693,85руб.636,03руб.624,47руб.607,12руб.589,77руб.555,08руб.537,74руб.
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Склад №57 дней1.006,09руб.925,14руб.902,01руб.884,66руб.855,75руб.803,71руб.780,58руб.
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Склад №610-12 дней630,25руб.583,99руб.566,65руб.555,08руб.537,74руб.503,04руб.491,48руб.

Характеристики

AT28C256-15PU, Энергонезависимая память [PDIP-28]The AT28C256-15PU is a high performance 256K (32K x 8bit) paged parallel EEPROM device in 28 pin DIP package. Its 256K of memory is organized as 32768words by 8bits. This EEPROM is manufactured with Atmel’s advanced non volatile CMOS technology, the device offers access time to 150ns with power dissipation of just 440mW. When device is deselected, the CMOS standby current is less than 200µA. The AT28C256-15PU is accessed like static RAM for read or write cycle without the need for external components. The device contains 64byte page register to allow writing of up to 64bytes simultaneously. It utilizes internal error correction for extended endurance and improved data retention characteristics. The AT28C256-15PU also includes an extra 64bytes of EEPROM for device identification or tracking.

• CMOS and TTL compatible inputs and outputs
• JEDEC approved byte wide pin-out
• High reliability CMOS technology
• Automatic page write operation
• Page write cycle time of 3ms (10ms maximum)
• Page write operation from 1byte to 64byte
• 50mA active current
• Hardware and software data protection
• Single 5V supply
• Operating temperature range from -40°C to 85°C